Bipolar Transistors - BJT Pwr Mid Perf Transistor
Products specifications
| Collector-Emitter Saturation Voltage | 0.23 V |
| Maximum Operating Temperature | + 150 C |
| Collector- Base Voltage VCBO | 120 V |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Gain Bandwidth Product fT | 175 MHz |
| Transistor Polarity | NPN |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |