Bipolar Transistors - BJT 200mW Half H-Bridge
Products specifications
| Maximum Operating Temperature | + 150 C |
| Configuration | Dual |
| Maximum DC Collector Current | 0.5 A |
| Gain Bandwidth Product fT | 100 MHz |
| Collector- Base Voltage VCBO | - 60 V, 80 V |
| Minimum Operating Temperature | - 55 C |
| Series | HBDM60 |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | - 5.5 V, 6 V |
| Collector- Emitter Voltage VCEO Max | - 60 V, 65 V |