Bipolar Transistors - BJT Pwr Hi Voltage Transistor
Products specifications
| Collector-Emitter Saturation Voltage | 0.5 V |
| Technology | Si |
| Gain Bandwidth Product fT | 50 MHz |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 200 C |
| Collector- Base Voltage VCBO | 400 V |
| Configuration | Single |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum DC Collector Current | 500 mA |
| Transistor Polarity | NPN |