MOSFETs MOSFETBVDSS: 41V-60V
Products specifications
| Configuration | Single |
| Vgs - Gate-Source Voltage | 20 V |
| Qualification | AEC-Q101 |
| Number of Channels | 1 Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Rds On - Drain-Source Resistance | 40 mOhms |
| Packaging | Reel |
| Id - Continuous Drain Current | 11.8 A |
| Technology | Si |
| Qg - Gate Charge | 29 nC |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Pd - Power Dissipation | 10.1 W |
| Minimum Operating Temperature | - 55 C |