MOSFETs 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
Lead Time: 84 Days
Products specifications
| Channel Mode | Enhancement |
| Qg - Gate Charge | 3.5 nC |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Qualification | AEC-Q101 |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
| Configuration | Single |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Pd - Power Dissipation | 806 mW |
| Id - Continuous Drain Current | 700 mA |
| Vgs - Gate-Source Voltage | 10 V |
| Number of Channels | 1 Channel |
| Packaging | Cut Tape, MouseReel, Reel |