MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm
Lead Time: 56 Days
Products specifications
Rds On - Drain-Source Resistance | 160 mOhms |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 2.6 A |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 70 V |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 3.9 W |
Transistor Polarity | P-Channel |
Technology | Si |
Qualification | AEC-Q101 |
Qg - Gate Charge | 18 nC |
Vgs th - Gate-Source Threshold Voltage | 1 V |