ZXMS6004N8-13

MOSFETs 60V N-Ch Enh FET 500mOhm 1.3A 120mJ

SKU: ZXMS6004N8-13

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MOSFETs 60V N-Ch Enh FET 500mOhm 1.3A 120mJ

Products specifications

Technology	Si
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	600 mOhms
Number of Channels	1 Channel
Id - Continuous Drain Current	1.3 A
Tradename	IntelliFET
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	-
Minimum Operating Temperature	- 40 C
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	1.28 W

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Products specifications

Technology	Si
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	600 mOhms
Number of Channels	1 Channel
Id - Continuous Drain Current	1.3 A
Tradename	IntelliFET
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	-
Minimum Operating Temperature	- 40 C
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	1.28 W