Bipolar Transistors - BJT PwrHiVoltTranstr
Products specifications
| Technology | Si |
| Collector- Base Voltage VCBO | - 500 V |
| Emitter- Base Voltage VEBO | - 7 V |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | - 500 mV |
| Gain Bandwidth Product fT | 60 MHz |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Transistor Polarity | PNP |
| Collector- Emitter Voltage VCEO Max | - 500 V |
| Maximum DC Collector Current | - 150 mA |