IGBT Modules 1200V 100A DUAL
Lead Time: 0 Days
Products specifications
| Product | IGBT Silicon Modules |
| Packaging | Tray |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Configuration | Half Bridge |
| Pd - Power Dissipation | 800 W |
| Gate-Emitter Leakage Current | 200 nA |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 150 A |
| Minimum Operating Temperature | - 40 C |