IGBT Modules 1700V 100A DUAL
Products specifications
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 960 W |
| Maximum Operating Temperature | + 125 C |
| Collector- Emitter Voltage VCEO Max | 1700 V |
| Gate-Emitter Leakage Current | 200 nA |
| Configuration | Dual |
| Packaging | Tray |
| Continuous Collector Current at 25 C | 200 A |
| Collector-Emitter Saturation Voltage | 2.6 V |