IGBT Modules LOW POWER ECONO
Lead Time: 0 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Pd - Power Dissipation | 180 W |
| Continuous Collector Current at 25 C | 35 A |
| Configuration | Hex |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Maximum Operating Temperature | + 125 C |
| Product | IGBT Silicon Modules |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 300 nA |
| Minimum Operating Temperature | - 40 C |