IGBT Modules 1200V 200A SINGLE
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | Single Dual Emitter |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tray |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Pd - Power Dissipation | 1450 W |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 370 A |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1200 V |