IGBT Modules 600V 200A DUAL
Products specifications
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 1.95 V |
| Configuration | Dual |
| Packaging | Tray |
| Pd - Power Dissipation | 445 W |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 230 A |
| Collector- Emitter Voltage VCEO Max | 600 V |