IGBT Modules LOW POWER ECONO
Lead Time: 0 Days
Products specifications
| Product | IGBT Silicon Modules |
| Configuration | Array 7 |
| Collector-Emitter Saturation Voltage | 2.55 V |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 300 nA |
| Collector- Emitter Voltage VCEO Max | 1600 V |
| Continuous Collector Current at 25 C | 45 A |
| Maximum Operating Temperature | + 125 C |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 230 W |