IGBT Modules 1200V 300A SINGLE
Lead Time: 160 Days
Products specifications
| Product | IGBT Silicon Modules |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 2500 W |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 320 nA |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current at 25 C | 430 A |
| Collector- Emitter Voltage VCEO Max | 1200 V |