BSM75GAR120DN2

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IGBT Transistors 1200V 100A GAR CH

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IGBT Transistors 1200V 100A GAR CH

Products specifications

Technology	Si
Maximum Operating Temperature	+ 150 C
Packaging	Tray
Continuous Collector Current at 25 C	100 A
Collector- Emitter Voltage VCEO Max	1200 V
Mounting Style	Chassis Mount
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	2.5 V
Pd - Power Dissipation	625 W
Configuration	Single

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Products specifications

Technology	Si
Maximum Operating Temperature	+ 150 C
Packaging	Tray
Continuous Collector Current at 25 C	100 A
Collector- Emitter Voltage VCEO Max	1200 V
Mounting Style	Chassis Mount
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	2.5 V
Pd - Power Dissipation	625 W
Configuration	Single