IGBT Modules IGBT MODULES 600V 50A
Products specifications
| Pd - Power Dissipation | 175 W |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 1.45 V |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 75 A |
| Packaging | Tray |
| Maximum Operating Temperature | + 150 C |
| Configuration | IGBT-Inverter |
| Collector- Emitter Voltage VCEO Max | 600 V |