IGBT Modules 1200 V, 75 A 3-level IGBT module
Lead Time: 70 Days
Products specifications
| Pd - Power Dissipation | 275 W |
| Gate-Emitter Leakage Current | 100 nA |
| Configuration | 3-Phase |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 1.45 V |
| Packaging | Tray |
| Continuous Collector Current at 25 C | 45 A |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Minimum Operating Temperature | - 40 C |