IGBT Modules MEDIUM POWER 62MM
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 370 A |
| Packaging | Tray |
| Pd - Power Dissipation | 1950 W |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Maximum Operating Temperature | + 125 C |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 3.2 V |