IGBT Modules N-CH 1.7KV 1.39KA
Lead Time: 98 Days
Products specifications
| Continuous Collector Current at 25 C | 1390 A |
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | Dual |
| Packaging | Tray |
| Collector-Emitter Saturation Voltage | 2.45 V |
| Pd - Power Dissipation | 6.25 kW |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1700 V |
| Maximum Operating Temperature | + 150 C |