IGBT Modules IGBT Module w/ IGBT & Diode
Lead Time: 0 Days
Products specifications
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 2 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 100 nA |
| Pd - Power Dissipation | 555 W |