IGBT Modules 1200 V, 1200 A dual IGBT module
Lead Time: 140 Days
Products specifications
| Pd - Power Dissipation | 20 mW |
| Maximum Operating Temperature | + 175 C |
| Gate-Emitter Leakage Current | 400 nA |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Continuous Collector Current at 25 C | 1200 A |
| Configuration | Dual |
| Packaging | Tray |