IGBT Modules N-CH 1.2KV 200A
Lead Time: 98 Days
Products specifications
| Configuration | Dual |
| Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 695 W |
| Maximum Operating Temperature | + 125 C |
| Packaging | Tray |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Continuous Collector Current at 25 C | 200 A |