IGBT Modules 1700 V, 1800 A dual IGBT module
Lead Time: 140 Days
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 1.75 V |
| Collector- Emitter Voltage VCEO Max | 1700 V |
| Continuous Collector Current at 25 C | 1800 A |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual |
| Pd - Power Dissipation | 8.95 kW |
| Packaging | Tray |
| Product | IGBT Silicon Modules |