IGBT Modules IGBT-MODULE
Lead Time: 12 Days
Products specifications
| Pd - Power Dissipation | 1100 W |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | Dual |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 240 A |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Packaging | Tray |
| Collector- Emitter Voltage VCEO Max | 1200 V |