IGBT Modules IGBT Module 200A 1700V
Lead Time: 84 Days
Products specifications
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual |
| Gate-Emitter Leakage Current | 100 nA |
| Pd - Power Dissipation | 1250 W |
| Collector- Emitter Voltage VCEO Max | 1700 V |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tray |
| Continuous Collector Current at 25 C | 310 A |
| Collector-Emitter Saturation Voltage | 2.45 V |
| Product | IGBT Silicon Modules |