IGBT Modules IGBT 1200V 225A
Lead Time: 98 Days
Products specifications
| Pd - Power Dissipation | 1050 W |
| Maximum Operating Temperature | + 150 C |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 2.15 V |
| Continuous Collector Current at 25 C | 225 A |
| Minimum Operating Temperature | - 40 C |