IGBT Modules IGBT 1200V 300A
Lead Time: 70 Days
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tray |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1600 W |
| Continuous Collector Current at 25 C | 450 A |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |