IGBT Modules IGBT Module 400A 650V
Products specifications
| Collector- Emitter Voltage VCEO Max | 650 V |
| Configuration | IGBT-Inverter |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tray |
| Continuous Collector Current at 25 C | 485 A |
| Pd - Power Dissipation | 1250 W |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Maximum Operating Temperature | + 150 C |