IGBT Modules 1200V 400A DUAL HALF BRIDGE
Lead Time: 84 Days
Products specifications
| Maximum Operating Temperature | + 125 C |
| Pd - Power Dissipation | 2 kW |
| Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 2.15 V |
| Packaging | Tray |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 580 A |
| Minimum Operating Temperature | - 40 C |