IGBT Modules 3300V 400A DUAL
Products specifications
| Collector-Emitter Saturation Voltage | 3.4 V |
| Maximum Operating Temperature | + 125 C |
| Collector- Emitter Voltage VCEO Max | 3300 V |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Packaging | Tray |
| Pd - Power Dissipation | 4.8 kW |
| Configuration | Dual |
| Continuous Collector Current at 25 C | 660 A |
| Minimum Operating Temperature | - 40 C |