IGBT Modules IGBT 600V 600A
Lead Time: 98 Days
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Configuration | Dual |
| Pd - Power Dissipation | 1650 W |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Packaging | Tray |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current at 25 C | 700 A |