FF600R07ME4_B11

IGBT Modules 650 V, 600 A dual IGBT module
Lead Time: 98 Days

SKU: FF600R07ME4B11BPSA1

Availability: 16 in stock

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IGBT Modules 650 V, 600 A dual IGBT module
Lead Time: 98 Days

Products specifications

Continuous Collector Current at 25 C	700 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Product	IGBT Silicon Modules
Gate-Emitter Leakage Current	100 nA
Configuration	Dual
Collector-Emitter Saturation Voltage	1.95 V
Collector- Emitter Voltage VCEO Max	650 V
Packaging	Tray
Pd - Power Dissipation	1800 W

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Products specifications

Continuous Collector Current at 25 C	700 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Product	IGBT Silicon Modules
Gate-Emitter Leakage Current	100 nA
Configuration	Dual
Collector-Emitter Saturation Voltage	1.95 V
Collector- Emitter Voltage VCEO Max	650 V
Packaging	Tray
Pd - Power Dissipation	1800 W