IGBT Modules N-CH 600V 100A
Lead Time: 84 Days
Products specifications
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Pd - Power Dissipation | 335 W |
| Configuration | Array 7 |
| Continuous Collector Current at 25 C | 100 A |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Gate-Emitter Leakage Current | 100 nA |
| Packaging | Tray |