IGBT Modules 1200 V, 25 A PIM three phase input rectifier IGBT module
Products specifications
| Collector-Emitter Saturation Voltage | 1.85 V |
| Gate-Emitter Leakage Current | 100 nA |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Configuration | Dual Modules |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 160 W |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tray |