IGBT Modules IGBT Module 25A 1200V
Lead Time: 98 Days
Products specifications
| Continuous Collector Current at 25 C | 39 A |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Pd - Power Dissipation | 190 W |
| Configuration | PIM 3-Phase Input Rectifier |
| Gate-Emitter Leakage Current | 400 nA |
| Packaging | Tray |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1200 V |