IGBT Modules 650 V, 75 A PIM three phase input rectifier IGBT module
Products specifications
| Collector- Emitter Voltage VCEO Max | 650 V |
| Pd - Power Dissipation | 250 W |
| Packaging | Tray |
| Minimum Operating Temperature | - 40 C |
| Continuous Collector Current at 25 C | 75 A |
| Maximum Operating Temperature | + 150 C |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 1.95 V |