IGBT Modules 1.85V IGBT 4 PIM
Lead Time: 91 Days
Products specifications
| Pd - Power Dissipation | 385 W |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Maximum Operating Temperature | + 150 C |
| Gate-Emitter Leakage Current | 100 nA |
| Packaging | Tray |
| Continuous Collector Current at 25 C | 150 A |
| Configuration | 3-Phase |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Collector-Emitter Saturation Voltage | 2.25 V |