IGBT Modules 1700V 225A 3-PHASE
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Minimum Operating Temperature | - 40 C |
| Collector- Emitter Voltage VCEO Max | 1700 V |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 340 A |
| Pd - Power Dissipation | 1.4 kW |
| Collector-Emitter Saturation Voltage | 2 V |
| Packaging | Tray |
| Configuration | Hex |
| Maximum Operating Temperature | + 125 C |