IGBT Modules N-CH 600V 45A
Lead Time: 91 Days
Products specifications
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 150 W |
| Gate-Emitter Leakage Current | 400 nA |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tray |
| Configuration | Hex |
| Continuous Collector Current at 25 C | 45 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Minimum Operating Temperature | - 40 C |