IGBT Modules HYBRID PACK 2
Products specifications
| Packaging | Tray |
| Configuration | 3-Phase |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.5 kW |
| Continuous Collector Current at 25 C | 400 A |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Collector- Emitter Voltage VCEO Max | 1200 V |