IGBT Modules IGBT 1200V 50A
Lead Time: 77 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Gate-Emitter Leakage Current | 100 nA |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Continuous Collector Current at 25 C | 83 A |
| Configuration | IGBT-Inverter |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tray |
| Product | IGBT Silicon Modules |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 335 W |