IGBT Modules N-CH 600V 11A
Products specifications
| Maximum Operating Temperature | + 150 C |
| Configuration | Hex |
| Collector-Emitter Saturation Voltage | 2 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 40.5 W |
| Packaging | Tray |
| Continuous Collector Current at 25 C | 11 A |
| Product | IGBT Silicon Modules |
| Gate-Emitter Leakage Current | 400 nA |