IGBT Modules 1200V 600A SINGLE
Lead Time: 84 Days
Products specifications
| Configuration | Single |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 900 A |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Packaging | Tray |
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 2.8 kW |
| Minimum Operating Temperature | - 40 C |