Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Products specifications
| Transistor Polarity | PNP |
| Maximum Operating Temperature | + 85 C |
| Collector-Emitter Saturation Voltage | - 150 mV |
| Configuration | Dual |
| Collector- Base Voltage VCBO | - 15 V |
| Emitter- Base Voltage VEBO | - 7 V |
| Collector- Emitter Voltage VCEO Max | - 10 V |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum DC Collector Current | - 1 A |