DMA206010R

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Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

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Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

Products specifications

Collector- Emitter Voltage VCEO Max	- 50 V
Transistor Polarity	PNP
Gain Bandwidth Product fT	150 MHz
Maximum DC Collector Current	- 200 mA
Collector-Emitter Saturation Voltage	- 200 mV
Maximum Operating Temperature	+ 85 C
Emitter- Base Voltage VEBO	- 7 V
Configuration	Dual
Collector- Base Voltage VCBO	- 60 V

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Products specifications

Collector- Emitter Voltage VCEO Max	- 50 V
Transistor Polarity	PNP
Gain Bandwidth Product fT	150 MHz
Maximum DC Collector Current	- 200 mA
Collector-Emitter Saturation Voltage	- 200 mV
Maximum Operating Temperature	+ 85 C
Emitter- Base Voltage VEBO	- 7 V
Configuration	Dual
Collector- Base Voltage VCBO	- 60 V