Bipolar Transistors - BJT Composite Transistor
Products specifications
| Maximum DC Collector Current | 100 mA |
| Emitter- Base Voltage VEBO | 7 V |
| Collector-Emitter Saturation Voltage | 0.13 V |
| Gain Bandwidth Product fT | 150 MHz |
| Configuration | Dual |
| Transistor Polarity | NPN |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Minimum Operating Temperature | - 55 C |
| Collector- Base Voltage VCBO | 60 V |
| Maximum Operating Temperature | + 150 C |