DME20B010R

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Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

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Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

Products specifications

Gain Bandwidth Product fT	150 MHz
Maximum Operating Temperature	+ 85 C
Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	7 V, - 7 V
Transistor Polarity	NPN, PNP
Maximum DC Collector Current	200 mA, - 200 mA
Collector-Emitter Saturation Voltage	130 mV, - 200 mV

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Products specifications

Gain Bandwidth Product fT	150 MHz
Maximum Operating Temperature	+ 85 C
Configuration	Dual
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	7 V, - 7 V
Transistor Polarity	NPN, PNP
Maximum DC Collector Current	200 mA, - 200 mA
Collector-Emitter Saturation Voltage	130 mV, - 200 mV