DMG204B10R

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Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

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Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

Products specifications

Maximum Operating Temperature	+ 150 C
Maximum DC Collector Current	- 100 mA, 0.5 A
Collector- Base Voltage VCBO	- 60 V, 25 V
Minimum Operating Temperature	- 40 C
Configuration	Dual
Emitter- Base Voltage VEBO	- 7 V, 12 V
Gain Bandwidth Product fT	150 MHz
Transistor Polarity	NPN, PNP
Collector-Emitter Saturation Voltage	- 0.2 V, 0.18 V
Collector- Emitter Voltage VCEO Max	- 50 V, 20 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Maximum DC Collector Current	- 100 mA, 0.5 A
Collector- Base Voltage VCBO	- 60 V, 25 V
Minimum Operating Temperature	- 40 C
Configuration	Dual
Emitter- Base Voltage VEBO	- 7 V, 12 V
Gain Bandwidth Product fT	150 MHz
Transistor Polarity	NPN, PNP
Collector-Emitter Saturation Voltage	- 0.2 V, 0.18 V
Collector- Emitter Voltage VCEO Max	- 50 V, 20 V