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Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm

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Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm

Products specifications

Collector-Emitter Saturation Voltage	100 mV
Collector- Emitter Voltage VCEO Max	50 V
Emitter- Base Voltage VEBO	5 V
Collector- Base Voltage VCBO	60 V
Gain Bandwidth Product fT	160 MHz
Configuration	Single
Transistor Polarity	NPN
Maximum Operating Temperature	+ 85 C
Maximum DC Collector Current	1 A

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Products specifications

Collector-Emitter Saturation Voltage	100 mV
Collector- Emitter Voltage VCEO Max	50 V
Emitter- Base Voltage VEBO	5 V
Collector- Base Voltage VCBO	60 V
Gain Bandwidth Product fT	160 MHz
Configuration	Single
Transistor Polarity	NPN
Maximum Operating Temperature	+ 85 C
Maximum DC Collector Current	1 A